CHA2159 rohs compliant ref. : dsCHA21597262 - 19 sep 07 1/6 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 55-65ghz low noise / medium power amplifier gaas monolithic microwave ic description the CHA2159 is a four - stage low noise and medium power amplifier. it is designed for a wide range of applications, from military to commercial communication systems. the backside of the chip is both rf and dc grounded. this simplifies the assembly process. the circuit is manufactured with a phemt process, 0.15m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is supplied in chip form. main features 4.0 db noise figure 20 db gain 14 dbm output power (-1db gain comp.) dc power consumption, 115ma @ 3.5v chip size: 2.35 x 1.11 x 0.10 mm -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 55 60 65 frequency (ghz) gain & rlosses (db) dbs11 dbs21 dbs22 nf typ. typical on wafer measurements main characteristics tamb = +25c, vd = 3.5v symbol parameter min typ max unit fop operating frequency range 55 65 ghz g small signal gain 18 20 db nf noise figure 4.0 4.8 db p1db output power at 1db gain compression 13 14 db m id bias current 115 150 ma esd protection: electrostatic discharge sensitive d evice. observe handling precautions!
CHA2159 55-65ghz low noise amplifier ref. : dsCHA21597262 - 19 sep 07 2/6 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics for broadband operation tamb = +25c, vd = 3.5v symbol parameter min typ max unit fop operating frequency range (1) 55 65 ghz g small signal gain (1) 18 20 db d g small signal gain flatness (1) 1.0 db is reverse isolation (1) 40 50 db nf noise figure 4.0 4.8 db p1db cw output power at 1db compression (1) 13 14 dbm vswrin input vswr (1) 2.5:1 4.0:1 vswrout output vswr (1) 2.0:1 2.5:1 id bias current 115 130 ma vd dc voltage 3.5 v (1) these values are representative for cw on-wafer measurements that are made without bonding wires at the rf ports. a wire bond of typically 0.1 to 0.15 nh will improv e the input and output matching. absolute maximum ratings tamb = +25c (1) symbol parameter values unit vd drain bias voltage 4.0 v id drain bias current in linear condition 150 ma vg gate bias voltage -2.0 to +0.4 v pin maximum peak input power overdrive (2) 0 dbm ta operating temperature range -40 to +85 c tstg storage temperature range -55 to +125 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration < 1s.
55-65ghz low noise amplifier CHA2159 ref. : dsCHA21597262 - 19 sep 07 3/6 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical chip on wafer sij parameters bias conditions: vd = +3.5v, vg1 = vg23 = vg4 adjus ted for id = 115ma freq (ghz) db(s11) p(s11) () db(s12) p(s12) () db(s21) p(s21) () db(s22) p(s22) () 20 -3.6 -168.5 -64.4 166 -8.4 -116 -4.7 -177 21 -3.7 -172.8 -67.3 173 -7.7 -142 -4.5 -180 22 -3.6 -177.5 -62.1 150 -7.4 -168 -4.3 177 23 -3.5 177.6 -58.6 162 -7.1 167 -4.1 174 24 -3.5 172.6 -58.3 146 -6.9 144 -3.8 170 25 -3.5 167.9 -54.5 113 -6.6 122 -3.5 166 26 -3.5 163.2 -57.5 129 -6.5 101 -3.3 161 27 -3.5 158.5 -54.9 106 -6.3 82 -3.1 156 28 -3.5 153.2 -54.9 100 -6.0 62 -2.9 151 29 -3.4 147.9 -53.0 96 -5.7 44 -2.7 146 30 -3.4 142.3 -52.6 88 -5.4 25 -2.7 140 31 -3.4 136.2 -54.4 84 -5.2 7 -2.6 135 32 -3.5 130.0 -51.5 76 -4.8 -10 -2.5 129 33 -3.6 123.7 -50.5 70 -4.4 -25 -2.4 124 34 -3.7 117.5 -49.7 60 -3.9 -40 -2.3 117 35 -3.9 110.8 -50.1 50 -3.2 -54 -2.2 111 36 -4.1 103.7 -48.8 42 -2.2 -66 -2.2 104 37 -4.5 95.9 -49.7 31 -0.7 -78 -2.3 98 38 -4.9 88.5 -49.6 28 1.3 -93 -2.2 90 39 -5.7 81.3 -48.9 10 3.6 -109 -2.3 83 40 -6.6 78.0 -50.3 3 6.2 -131 -2.5 74 41 -7.1 76.7 -49.3 4 8.6 -155 -2.6 66 42 -6.9 76.6 -48.3 -1 10.7 176 -3.0 58 43 -6.2 73.3 -48.5 -18 12.2 146 -3.3 49 44 -5.5 64.0 -48.1 -21 13.3 116 -3.7 41 45 -5.3 53.7 -48.1 -39 14.1 88 -4.1 32 46 -5.5 42.8 -49.8 -49 14.9 61 -4.8 24 47 -5.5 34.2 -50.8 -59 15.8 33 -5.8 17 48 -5.7 24.3 -51.8 -40 16.6 4 -6.6 11 49 -5.9 16.0 -49.8 -52 17.3 -23 -7.5 6 50 -5.9 6.7 -51.2 -42 18.0 -53 -8.2 1 51 -6.2 -0.5 -49.9 -72 18.4 -82 -9.0 -1 52 -6.0 -8.6 -47.8 -68 18.9 -111 -9.4 -4 53 -5.6 -18.2 -47.4 -58 19.4 -141 -9.4 -6 54 -5.5 -31.1 -47.2 -63 19.7 -172 -9.6 -9 55 -5.8 -40.4 -57.2 -91 19.8 157 -9.4 -14 56 -5.7 -50.9 -51.5 -99 19.8 127 -9.1 -20 57 -5.8 -62.2 -48.4 -79 19.9 96 -8.8 -26 58 -5.9 -72.9 -49.5 -91 19.7 65 -9.1 -38 59 -6.0 -84.0 -49.0 -105 19.7 35 -9.7 -43 60 -7.1 -94.9 -44.6 -115 19.6 5 -10.1 -52 61 -7.1 -102.8 -49.7 -141 19.7 -27 -10.1 -57 62 -7.0 -111.9 -44.5 -141 19.5 -59 -10.3 -64 63 -7.5 -122.1 -46.1 -168 19.7 -91 -10.9 -72 64 -7.9 -127.1 -44.5 175 20.1 -124 -12.5 -75 65 -8.3 -137.0 -48.4 167 21.0 -161 -13.4 -69
CHA2159 55-65ghz low noise amplifier ref. : dsCHA21597262 - 19 sep 07 4/6 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical on wafer measurements bias conditions: tamb = +25c, vd = 3.5v, vg1 = vg2 3 = vg4 adjusted for id = 115ma typical gain, return losses and noise figure -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 40 45 50 55 60 65 frequency (ghz) gain, rlosses & nf (db) dbs11 dbs21 dbs22 nf typ. typ ic a l o u tp ut p ow e r -1 d b 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 5 5 5 6 5 7 5 8 5 9 6 0 6 1 6 2 6 3 6 4 6 5 fr e q ue n c y (gh z ) output power p-1db (dbm)
55-65ghz low noise amplifier CHA2159 ref. : dsCHA21597262 - 19 sep 07 5/6 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip assembly and mechanical data note: supply feed should be capacitively bypassed. 25m diameter gold wire is recommended. bonding pad positions dc pads size: 100/100 m, chip thickness: 100m.
CHA2159 55-65ghz low noise amplifier ref. : dsCHA21597262 - 19 sep 07 6/6 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 ordering information chip form : CHA2159-99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of u se of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or o therwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publicat ion supersedes and replaces all information previou sly supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical co mponents in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
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